Process Control in Production-Worthy Plasma Doping Technology

Autor:	Ziwei Fang, Edwin A. Arevalo, T. M. Parrill, Harold Persing, Miller Timothy J, Edmund J. Winder, Vikram Singh
Rok vydání:	2006
Předmět:	Materials science Ion implantation Beamline Semiconductor device fabrication Physics::Medical Physics Doping Hardware_INTEGRATEDCIRCUITS Process control Nanotechnology Plasma Throughput (business) Space charge Engineering physics
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.2401568
Popis:	As the semiconductor industry continues to scale devices of smaller dimensions and improved performance, many ion implantation processes require lower energy and higher doses. Achieving these high doses (in some cases ∼1×1016 ions/cm2) at low energies (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3cd606097e8f0a5c991a71f20f942b19 https://doi.org/10.1063/1.2401568 Zobrazit plný text záznamu