An improved model for InP/InGaAs double heterojunction bipolar transistors
| Autor: | Yuxia Shi, Yan Wang, Yuxiong Cao, Zhi Jin, Yongbo Su |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Modulation effect business.industry Heterojunction bipolar transistor Bipolar junction transistor Blocking effect Heterojunction Transit time Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials Materials Chemistry Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 81:163-169 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2012.10.019 |
| Popis: | An improved VBIC model for InP/InGaAs double heterojunction bipolar transistors (DHBTs) is proposed. The model accounts for the double heterojunction effect and current blocking effect with novel current expressions. New empirical formulas for the collector-base capacitance and transit time are developed to explain the mobile-charge modulation effect and the role of negative differential mobility. DC and S-parameter measurements are conducted in order to realize the whole extraction flow. The accuracy and validity of this new model and extraction strategy are demonstrated by comparisons of simulation to measurement data on DC, AC small-signal and large-signal characteristics over a wide bias region. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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