Assessing reliability of nano-scaled CMOS technologies one defect at a time

Autor:	M. Toledano Luque, Guido Groeseneken, Tibor Grasser, J. Franco, B. Kaczer, Pieter Weckx, Ph. J. Roussel
Rok vydání:	2012
Předmět:	Reliability (semiconductor) Integrated injection logic Materials science CMOS Nanoelectronics business.industry Nano Electrical engineering Electronic engineering Hardware_PERFORMANCEANDRELIABILITY business Voltage
Zdroj:	2012 International Conference on Emerging Electronics.
Popis:	In the deeply downscaled CMOS technologies with ~10 nm gate lengths only a handful of defects will be present in each device, while their relative impact on the device characteristics will be significant. The behavior of these defects is stochastic, voltage and temperature dependent, and widely distributed in time, resulting in each device behaving very differently during operation (Fig. 1) [1,2].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3cc4909cb17304ed111009a0fe1120e1 https://doi.org/10.1109/icemelec.2012.6636222 Zobrazit plný text záznamu