Application of heterojunction FET to power amplifier for cellular telephone
| Autor: | Yorito Ota, Kenichi Inoue, M. Yanagihara, Hiromasa Fujimoto, Hiroyasu Takehara, Hiroyuki Masato, C. Adachi |
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| Rok vydání: | 1994 |
| Předmět: |
Power-added efficiency
Materials science business.industry Superlattice Amplifier Electrical engineering Heterojunction Cellular telephone Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Saturation (magnetic) |
| Zdroj: | Electronics Letters. 30:906 |
| ISSN: | 0013-5194 |
| DOI: | 10.1049/el:19940571 |
| Popis: | The high power properties of heterojunction FETs (H-FET) have been investigated. The H-FETs are fabricated by using a strained AlGaAs/GaInAs/GaAs/AlGaAs selectively-doped double heterojunction structure. As compared with GaAs MESFETs, the H-FETs show 1.5 dB higher saturation power and 8% higher power-added efficiency than those of the MESFETs, at 950 MHz and 4.7 V. The H-FETs are more suitable for the power amplifier of cellular telephones. |
| Databáze: | OpenAIRE |
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