Band diagram construction of CdTe/Sb2Te3 interface using synchrotron radiation
| Autor: | Lianghuan Feng, Songbai Hu, Wei Li, Bing Li, Jing-Quan Zhang, Lili Wu, Zhe Zhu |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Antimony telluride
Materials science Renewable Energy Sustainability and the Environment business.industry Synchrotron radiation Substrate (electronics) Cadmium telluride photovoltaics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Sputtering Band diagram Optoelectronics business Layer (electronics) |
| Zdroj: | Solar Energy Materials and Solar Cells. 134:329-333 |
| ISSN: | 0927-0248 |
| Popis: | The CdTe/Sb2Te3 interface was prepared by co-evaporation on an ultra-thin glass substrate and studied “in-situ” by photoelectron spectroscopy using a tunable synchrotron radiation photon source. The results indicated that the as-deposited antimony telluride was a mixture of Sb–Te phase and Sb2Te3 structure. The band diagram showed a conduction band offset (ΔECB) of 0.65 eV at the interface. A thin layer of Sb2Te3 came into being on the surface of CdTe with a subsequent 300 °C anneal. The sputter depth profile suggested that the annealed interface was actually constituted by the “substrate CdTe/interface Sb+Cd donors/inner Sb–Te mixture/surface Sb2Te3” structure. The band diagram gave ΔECB=1.35 eV for the annealed interface. It was found that there was a thin barrier of 0.2 eV induced by Sb+Cd donors for the hole transportation at the interface. To create a thin p+ layer between CdTe and the back electrode, a 50 A thick Sb2Te3 layer was used for the back contact to CdTe thin film solar cells. J–V characteristic showed that this thin p+ back contact greatly enhanced the cell performance. |
| Databáze: | OpenAIRE |
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