Structural modifications of theGd2O3(110)films on GaAs(100)

Autor:	C. Steiner, J. Kwo, Ahmet Refik Kortan, B. Bolliger, Mehmet Erbudak, Minghwei Hong, Joseph Petrus Mannaerts
Rok vydání:	2000
Předmět:	Materials science Carbon film Passivation business.industry Optoelectronics Substrate (electronics) Epitaxy business
Zdroj:	Physical Review B. 62:R10614-R10617
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.62.r10614
Popis:	We report an fcc structure for the epitaxial Gd2O3 films grown on GaAs~100!. This fluorite-derived structure appears to be stabilized by epitaxy with the substrate and has a great similarity to the GaAs structure. A model calculation supports this finding. Our secondary-electron imaging studies of these nanometer-thick films reveal that the films are cubic as deposited, and this structure can be derived from the stable a-phase of the Gd2O3 by a mild Ne-ion bombardment and a subsequent anneal. These epitaxial Gd2O3 films have great importance because of their excellent surface passivation properties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3ca8119fa69b46b3a464a0a9db883c2f https://doi.org/10.1103/physrevb.62.r10614 Zobrazit plný text záznamu