Low Energy Electron‐Enhanced Etching of GaN/Si in Hydrogen Direct Current Plasma
| Autor: | D. A. Choutov, Kevin P. Martin, H. P. Gillis, C. R. Abernathy, Stephen J. Pearton |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Plasma etching Hydrogen Silicon Renewable Energy Sustainability and the Environment technology industry and agriculture Analytical chemistry chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Auger chemistry Etching (microfabrication) Materials Chemistry Electrochemistry Thin film Gallium Stoichiometry |
| Zdroj: | Journal of The Electrochemical Society. 143:L251-L253 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1837223 |
| Popis: | The authors have demonstrated low energy electron-enhanced etching (LE4) of 1.0 {micro}m thick films of GaN on (100) Si substrates with good anisotropy. The etch rate increased from 70 to 525 {angstrom}/min as the sample temperature increased from 50 to 250 C. Auger spectra indicated that surface stoichiometry was essentially unchanged during LE4 at process temperatures below 100 C; samples etched at higher temperatures showed excess gallium at the surface. |
| Databáze: | OpenAIRE |
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