Atomic layer epitaxy growth of doped zinc oxide thin films from organometals
| Autor: | Vesa Lujala, Tuomo Suntola, Jarmo Skarp, Markku Tammenmaa |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
inorganic chemicals
Absorption spectroscopy Chemistry Doping Inorganic chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Zinc Condensed Matter Physics Surfaces Coatings and Films Chemical engineering Aluminium Atomic layer epitaxy Thin film Group 2 organometallic chemistry |
| Zdroj: | Applied Surface Science. :34-40 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(94)90192-9 |
| Popis: | An atomic layer epitaxy process for growing Al-doped ZnO thin films is presented. Organometallic precursors of zinc and aluminum were used to react with water at substrate temperatures of 120–350°C. Growth rate varied from 0.5 to 2.5 A/cycle, depending on precursors and substrate temperatures used. With optimum doping, sheet resistances of 10 Ω/□ with 1 μm thick films were obtained. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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