Impurity‐induced layer disordering in In0.5(AlxGa1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers
| Autor: | W. E. Plano, John Dallesasse, D. W. Nam, K. C. Hsieh, Judith E. Baker, Robert M Fletcher, T. D. Osentowski, Nick Holonyak, M. G. Craford, C. P. Kuo |
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| Rok vydání: | 1989 |
| Předmět: |
Materials science
Photoluminescence business.industry Superlattice Analytical chemistry General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Condensed Matter::Materials Science Impurity law Transmission electron microscopy Optoelectronics Continuous wave business Quantum well |
| Zdroj: | Journal of Applied Physics. 66:482-487 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.343562 |
| Popis: | Diffusion of Si into quantum‐well heterostructures and superlattices employing the high gap III‐V quaternary system Iny (AlxGa1−x )1−yP is shown to result in impurity‐induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP‐InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried‐heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1−x )0.5 P p‐n quantum‐well heterostructures. The disorder‐defined stripe‐geometry diode lasers operate pulsed at 300 K near 6400 A. Continuous wave operation at λ∼6255 A is achieved at −47 °C. |
| Databáze: | OpenAIRE |
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