Growth of GeSn/Ge Superlattices by Remote Plasma-Enhanced Chemical Vapor Deposition

Autor:	Arnold Kiefer, Bruce Claflin, Gordon Grzybowski
Rok vydání:	2019
Předmět:	Diffraction Materials science Photoluminescence business.industry Superlattice Remote plasma Optoelectronics Chemical vapor deposition business
Zdroj:	2019 IEEE Photonics Society Summer Topical Meeting Series (SUM).
DOI:	10.1109/phosst.2019.8794876
Popis:	Superlattices of GeSn/Ge were grown at 290 ? on Ge substrates by remote plasma enhanced chemical vapor deposition, using GeH4 and SnCl4 precursors. The structural and optical properties of these layers were characterized by x-ray diffraction, and room temperature photoluminescence.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3c57888adbf243bef8c197ec2d1d3262 https://doi.org/10.1109/phosst.2019.8794876 Zobrazit plný text záznamu