A Process Technique to Reduce Metallization Shorts in IC's due to Pinholes in Oxide
| Autor: | N. N. Kundu, G. L. Sethi, B. R. Marathe |
|---|---|
| Rok vydání: | 1973 |
| Předmět: |
Engineering
business.industry Process (computing) Oxide Integrated circuit Pinhole Computer Science Applications Theoretical Computer Science law.invention chemistry.chemical_compound Planar chemistry law Electronic engineering Optoelectronics Electrical and Electronic Engineering business Device failure |
| Zdroj: | IETE Journal of Research. 19:481-484 |
| ISSN: | 0974-780X 0377-2063 |
| DOI: | 10.1080/03772063.1973.11487239 |
| Popis: | One of the major defects in the photolithographic step used in planar technology is the pinholes in the oxide which can result in device failure due to metallization shorts. This type of defect is one of the important factors responsible for the low yield of integrated circuit production.In the present day complex IC's, a large part of the dice is covered by metallization. Any pinhole in the oxide will lead to shorting of the devices and lower yields.In this work, various factors responsible for pinholes in oxide have been discussed and a technique which can minimize the device failure due to metallization shorts through pinholes in the case of bipolar IC's has been described. Experimental data for the effectiveness of the process have been presented in the end. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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