| Autor: |
Ki Hyun Hwang, Seung-Hwan Lee, Seok Sik Kim, Dong Chan Kim, Jae Soon Lim, S. Choi, Sang-In Lee, Kwang Hyun Chin, Yeong-kwan Kim, Moon Yong Lee, Seo Young Dong, Man-Ho Cho, Young-sun Kim, Wan Don Kim, Kab Jin Nam, Joo Tae Moon, Hong-bae Park, Young Wook Park |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138). |
| DOI: |
10.1109/iedm.2000.904332 |
| Popis: |
Novel Al/sub 2/O/sub 3/ process was developed in order to extend the applicability of reliable SIS and MIS Al/sub 2/O/sub 3/ capacitors as well as Al/sub 2/O/sub 3/ EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al/sub 2/O/sub 3/ film were surprisingly improved. The SIS and MIS Al/sub 2/O/sub 3/ capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1 Gbit DRAM with design rule of 0.15 and 0.13 /spl mu/m, respectively. Moreover, Al/sub 2/O/sub 3/ EBL for a MIM capacitor was successfully used to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 /spl mu/m, and beyond. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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