Thick orientation-patterned growth of GaP on wafer-fused GaAs templates by hydride vapor phase epitaxy for frequency conversion
| Autor: | Martin M. Kimani, Ronald W. Stites, Michael Snure, Rita D. Peterson, Vladimir Tassev, Shivashankar Vangala |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Vapor phase Nanotechnology 02 engineering and technology Epitaxy 01 natural sciences Inorganic Chemistry Frequency conversion 0103 physical sciences Wafer Electrical and Electronic Engineering Physical and Theoretical Chemistry Spectroscopy 010302 applied physics business.industry Hydride Organic Chemistry 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Template Material quality Optoelectronics 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Optical Materials. 60:62-66 |
| ISSN: | 0925-3467 |
| DOI: | 10.1016/j.optmat.2016.07.003 |
| Popis: | Quasi-phase-matched (QPM) GaP layers up to 300 μm thick have been produced by low-pressure hydride vapor phase epitaxy (LP-HVPE) overgrowth on orientation-patterned GaAs (OPGaAs) templates fabricated using a wafer-fusion bonding technique. The growth on the OPGaAs templates resulted in up to 200 μm thick vertically propagating domains, with a total GaP thickness of 300 μm. The successful thick growth on OPGaAs templates is the first step towards solving the material problems associated with unreliable material quality of commercially available GaP wafers and making the whole process of designing QPM frequency conversion devices molecular beam epitaxy free and more cost-effective. |
| Databáze: | OpenAIRE |
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