Anomalous Time-of-Flight Distributions Observed for Argon Implanted in Silicon and Resputtered byAr+-Ion Bombardment

Autor:	D.J. Oostra, F. H. M. Sanders, A.E. De Vries, G. N. A. van Veen, J. Dieleman, A. van der Veen
Rok vydání:	1986
Předmět:	Materials science Argon Silicon General Physics and Astronomy chemistry.chemical_element Kinetic energy Ion Time of flight Ion implantation chemistry Sputtering Etching (microfabrication) Physics::Space Physics Astrophysics::Solar and Stellar Astrophysics Atomic physics
Zdroj:	Physical Review Letters. 57:739-742
ISSN:	0031-9007
DOI:	10.1103/physrevlett.57.739
Popis:	A Si substrate is bombarded by 3-keV Ar/sup +/ ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles.
Databáze:	OpenAIRE
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