Electronic carrier density in doped Bi-based high-Tc superconductors
| Autor: | A. B. Lazarev, A. V. Pirogov, I. A. Gaganov, A. N. Ponomarev, V. N. Duginov, V. G. Grebinnik, V. G. Olshevsky, S. Kapusta, S. N. Shilov, E. Preisler, F. N. Gygax, B. F. Kirillov, M. Weber, V. A. Zhukov, V. Yu. Pomjakushin, H. Maletta, Anthony A. Amato, Vyacheslav G. Storchak, A. Schenck, J. Bock |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Neutron powder diffraction
Superconductivity Valence (chemistry) Materials science Condensed matter physics Doping Analytical chemistry Energy Engineering and Power Technology Condensed Matter Physics Electronic Optical and Magnetic Materials Charge-carrier density Crystallite Electrical and Electronic Engineering Mixed phase Spectroscopy |
| Zdroj: | Physica C: Superconductivity. :749-750 |
| ISSN: | 0921-4534 |
| DOI: | 10.1016/0921-4534(91)91598-x |
| Popis: | The superconducting carrier density n , was measured by means of μ + SR spectroscopy in the mixed phase of a series of polycrystalline Bi-based 2212 superconductors with different substitution of Bi 3+ by Pb 2+ . In exactly the same samples the effective valence per Cu-atom V ( Cu ) was determined by neutron powder diffraction. We observed that n , and V ( Cu ) are not proportional to each other in the heavily doped region. This behavior is interpreted as evidence that the carriers become more and more localized with increasing lead content. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|