Monolayer scale study of segregation effects in InAs/GaAs heterostructures
| Autor: | Jean-Michel Gérard, J. Y. Marzin, C. d’Anterroches |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Low temperature photoluminescence
Condensed matter physics Condensed Matter::Other chemistry.chemical_element Heterojunction Nanotechnology Scale (descriptive set theory) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Displacement (vector) Inorganic Chemistry Condensed Matter::Materials Science chemistry Monolayer Materials Chemistry Indium Quantum well Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 127:536-540 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(93)90678-p |
| Popis: | We grow by molecular beam epitaxy and study by low temperature photoluminescence and high resolution electron microscopy pairs of identical AlAs/GaAs quantum wells, in which an InAs monolayer is inserted at nominally symmetric positions in the well, close to one or the other interface. The absolute displacement of indium atoms due to surface segregation processes is studied with respect to the well-defined GaAs/AlAs interfaces. Both techniques show that the InAs-on-GaAs interface lies at its nominal position, which gives the first clear example of a kinetical freezing of segregation processes in semiconductor heterostructures. PL data allow us to refine previous estimates of the segregation efficiency and to compare quantitatively various growth techniques. |
| Databáze: | OpenAIRE |
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