Narrow Linewidth Photoluminescence from Top-Down Fabricated 20 nm InGaN/GaN Quantum Dots at Room Temperature
| Autor: | Matt Hartensveld, Gregory A. Howland, David J. Starling, Stefan F. Preble, Bryan Melanson, Jing Zhang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Photoluminescence business.industry Nanowire 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 010309 optics Full width at half maximum Laser linewidth Wavelength Quantum dot Etching (microfabrication) 0103 physical sciences Optoelectronics Photonics 0210 nano-technology business |
| Zdroj: | Conference on Lasers and Electro-Optics. |
| DOI: | 10.1364/cleo_si.2020.sth4h.2 |
| Popis: | Promising narrow linewidth photoluminescence with a FWHM of 7.1 nm at wavelength 418 nm was achieved at room temperature from InGaN/GaN quantum dots in a 20-nm-diameter top-down fabricated nanowire. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|