High resolution TEM of hydrogen-induced microdefects in silicon

Autor:	Fernando Ponce, J. C. Tramontana, N. M. Johnson, J Walker
Rok vydání:	2021
Předmět:	Materials science Silicon chemistry Hydrogen business.industry High resolution chemistry.chemical_element Optoelectronics business
Zdroj:	Microscopy of Semiconducting Materials, 1987
DOI:	10.1201/9781003069621-8
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3c148763b2f6ec02f7030ebeebb6d3e3 https://doi.org/10.1201/9781003069621-8 Zobrazit plný text záznamu