Multiple-input logic circuit design using BiCMOS-based negative differential resistance circuits
| Autor: | Cher-Shiung Tsai, Shih-Hao Liu, Kwang-Jow Gan |
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| Rok vydání: | 2011 |
| Předmět: |
Engineering
business.industry Circuit design Electrical engineering Resonant-tunneling diode NOR logic Hardware_PERFORMANCEANDRELIABILITY BiCMOS Surfaces Coatings and Films Hardware and Architecture Logic gate Signal Processing Hardware_INTEGRATEDCIRCUITS Inverter business NMOS logic Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | Analog Integrated Circuits and Signal Processing. 73:409-414 |
| ISSN: | 1573-1979 0925-1030 |
| DOI: | 10.1007/s10470-011-9709-3 |
| Popis: | We first propose an inverter circuit design using the negative differential resistance (NDR) circuit composed of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By suitably designing the MOS width/length parameters, we can obtain the ?-type NDR current---voltage (I---V) characteristic. Expanding the inverter circuit operation, the two-input and four-input NOR logic gates are demonstrated. Especially, the design and fabrication of the logic circuit is based on the standard SiGe BiCMOS process. Compared to the traditional NDR device like resonant tunneling diode (RTD), our MOS---HBT---NDR-based applications are much easier to be combined with some Si-based or SiGe-based devices on the same chip. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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