Novel gap filling BARC with high chemical resistance
| Autor: | Tamura Mamoru, Ogata Hiroto, Yuki Usui, Yasushi Sakaida, Hashimoto Yuto, Tomoya Ohashi, Takahiro Kishioka |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Chemical resistance
Materials science business.industry chemistry.chemical_element Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Planarity testing 010309 optics Outgassing chemistry Etching (microfabrication) 0103 physical sciences Optoelectronics Adhesive 0210 nano-technology business Tin Lithography Shrinkage |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2257664 |
| Popis: | In the recent of the semiconductor manufacturing process, variety of properties (narrow gap-filling and planarity etc.) are required to organic BARC in addition to the conventional requirements. Moreover, SC-1 resistance is also needed because BARC is often used as a wet etching mask when TiN processing. But conventional BARC which include crosslinker doesn’t have enough SC-1 resistance, and we found that it is also difficult to obtain good gap-filling and good planarity because of outgassing and film shrinkage derived from the crosslinker. In this study, we have developed the new self-crosslinking BARC. The new crosslinking system shows low outgassing and film shrinkage because of not including crosslinker. So, novel BARC has better gap filling property and planarity and over 3 times higher SC-1 resistance than that of conventional BARC. Moreover, by adding the low molecular weight additive which has high adhesive unit to TiN surface, the novel BARC has over 10 times higher SC-1 resistance than that of conventional BARC. And this novel BARC can be applied both ArF and KrF lithography process because of broad absorbance, high etching rate, chemical resistance (SC-1, SC-2, DHF, and others) and good film thickness uniformity. In this paper, we will discuss the detail of new self-crosslinking BARC in excellent total performance and our approach to achieve high chemical resistance. |
| Databáze: | OpenAIRE |
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