Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-basedp–i–nnanostructure under subpicosecond laser excitation
| Autor: | A. Botcharev, Arnel Salvador, Kong-Thon Tsen, Hadis Morkoç, Ravindra P. Joshi |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Nanostructure business.industry General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Molecular physics law.invention Photoexcitation Condensed Matter::Materials Science symbols.namesake Semiconductor law Electric field symbols Optoelectronics business Raman spectroscopy Excitation Raman scattering |
| Zdroj: | Journal of Applied Physics. 81:406-408 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.364072 |
| Popis: | We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p–i–n nanostructure semiconductor under subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for a photoexcited electron–hole pair density of n⩽1015 cm−3. As the density of photoexcited carriers increased, we observed a significant decrease of the average electric field. In particular, for n=1018 cm−3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained. |
| Databáze: | OpenAIRE |
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