Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure
| Autor: | In Seok Seo, Yong Jo Park, Cheul Ro Lee, In Hwan Lee |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Photodetector Heterojunction Gallium nitride Chemical vapor deposition Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound Responsivity Optics chemistry Materials Chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy business Dark current |
| Zdroj: | Journal of Crystal Growth. 252:51-57 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(02)02523-x |
| Popis: | We report on the solar-blind metal–semiconductor–metal (MSM) UV photodetector fabricated on the Al 0.3 Ga 0.7 N/GaN heterostructure layer grown on sapphire(0 0 0 1) by metalorganic chemical vapor deposition. The use of high-temperature (HT)-AlN interlayer in Al 0.3 Ga 0.7 N/GaN epilayer and its effects on the grown structures were explored. The Al 0.3 Ga 0.7 N-based interdigitated MSM photodetector has been successfully fabricated and characterized. The device reveals that a visible rejection is more than 3 orders of magnitude with a cutoff wavelength at 292 nm and the responsivity is up to 0.15 A/W. Also, MSM UV photodetector shows very fast response time of 12.5 ns without reverse bias and very low dark current due to low noise with a typical value of 72 pA and 0.15 μA at 10 and 40 V, respectively. The obtained results are very promising for the enhancement of solar-blind MSM UV photodetectors and simultaneously very sufficient for application in UV region such as UV astronomy, UV missile detection and visible blindness materials. |
| Databáze: | OpenAIRE |
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