Erratum: 'Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects' [J. Appl. Phys. 120, 245705 (2016)]
| Autor: | Ravindra P. Joshi, James C. Dickens, Animesh R. Chowdhury, Andreas A. Neuber |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoconductivity Wide-bandgap semiconductor General Physics and Astronomy Dark conductivity 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Trap (computing) Impact ionization 0103 physical sciences Atomic physics 0210 nano-technology |
| Zdroj: | Journal of Applied Physics. 123:089902 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.5024918 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|