Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing
| Autor: | Min Jeong Shin, Dong Min Kang, Hae Cheon Kim, Jongmin Lee, Hyun-Wook Jung, Jae-Won Do, Jong-Won Lim, Ho Kyun Ahn, Sungil Kim, Kyu-Jun Cho, Hyung Sup Yoon, Byoung-Gue Min |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance General Physics and Astronomy Schottky diode 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences Isotropic etching Cutoff frequency Threshold voltage 0103 physical sciences Optoelectronics Dry etching Inductively coupled plasma 0210 nano-technology business |
| Zdroj: | Journal of the Korean Physical Society. 71:360-364 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.71.360 |
| Popis: | We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance (g m ) of 345 mS/mm, and a threshold voltage (V th ) of −2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency (f T ) of 48 GHz and a maximum oscillation frequency (f max ) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz. |
| Databáze: | OpenAIRE |
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