Electronic conduction processes in Pt-doped tin oxide thin films prepared by RF magnetron sputtering
| Autor: | E. W. Williams, R.D. Gould, A. G. Keeling, Aseel Hassan |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Doping Analytical chemistry Conductivity Sputter deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Vacuum evaporation Condensed Matter::Materials Science Dissipation factor Electrical and Electronic Engineering Thin film Ohmic contact |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 5:310-314 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/bf00921258 |
| Popis: | Thin films of Pt-doped SnO2 were prepared by RF magnetron sputtering onto glass substrates maintained at room temperature. Gold electrodes were provided by conventional vacuum evaporation to form sandwich structures. X-ray diffraction measurements confirmed the films to be of an amorphous structure. Room temperature d.c. measurements showed a dominant Poole-Frenkel conduction process at low applied voltages, both under vacuum and in ambient air, but the results of the latter exhibited localized field enhancement caused by various adsorbed oxygen species. At higher voltages space-charge-limited conductivity was observed, with the temperature parameter characterizing the exponential trap distribution decreasing from approximately 1500 to 1050 K as a result of the oxygen adsorption. A.c. conductivity was characterized by an angular frequency, Ω, dependence of the form Ωs with an indexs < 1, and was associated with a relaxation process due mainly to a charge-carrier hopping mechanism. Both capacitance and loss tangent decreased with increasing frequency, in accordance with existing theory for samples provided with ohmic contacts. |
| Databáze: | OpenAIRE |
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