Reduction in optical reflection loss at intermediate adhesive layer for mechanical stacked multi-junction solar cells

Autor:	Toshiyuki Sameshima, Shinya Yoshidomi, Shunsuke Kimura, Masahiko Hasumi
Rok vydání:	2015
Předmět:	Indium gallium zinc oxide Materials science Silicon business.industry chemistry.chemical_element Reduction (complexity) Wavelength chemistry Optoelectronics Adhesive business Layer (electronics) Electrical conductor Indium
Zdroj:	2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
DOI:	10.1109/am-fpd.2015.7173240
Popis:	We propose a method of reduction in optical reflection loss by transparent conductive Indium Gallium Zinc Oxide (IGZO) for the purpose of fabricating mechanical stacked solar cells. Si and Ge substrates coated with 200 nm thick 0.058 Ωcm IGZO layers were stacked with epoxy-type transparent adhesive dispersed with 20 µm sized Indium Thin Oxide (ITO) particles to form a structure of Si/IGZO/adhesive/IGZO/Ge. Marked low reflectively ranged from 0.33 to 0.38 in wavelength between 1150 and 1600 nm were achieved while conventional stacked sample with the structure of Si/adhesive/Ge had reflectivity ranged from 0.51 to 0.52. Numerical analysis revealed that reduction in optical reflectivity was realized by optical interference matching of IGZO layers and proposed the best thickness of IGZO of 185 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3bff8c3c3aafedbe77c3b19608e48560 https://doi.org/10.1109/am-fpd.2015.7173240 Zobrazit plný text záznamu