Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates
| Autor: | M. F. Vilela, David R. Rhiger, Jeffrey M. Peterson, L. O. Bubulac, Y. Chen, J. A. Arias, M. Jaime-Vasquez, P. J. Smith, C. M. Lennon, J. W. Bangs, R. N. Jacobs, J. D. Benson, E. A. Patten, Scott M. Johnson, J. K. Markunas, G. Brill, Priyalal Wijewarnasuriya, L. A. Almeida, D. D. Lofgreen, Andrew J. Stoltz |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry chemistry.chemical_element Condensed Matter Physics Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Crystallography Etch pit density chemistry Impurity Getter Scanning transmission electron microscopy Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Indium Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 42:3217-3223 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-013-2780-z |
| Popis: | The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning transmission electron microscopy. Impurities (Li, Na, and K) were shown to getter in as-grown CdTe/Si epilayers at in situ Te-stabilized thermal anneal (~500°C) interfaces. In HgCdTe/CdTe/Si epilayers, indium accumulation was observed at Te-stabilized thermal anneal interfaces. Impurity accumulation was measured at HgCdTe/CdTe and CdTe/ZnTe interfaces. Processing anneals were found to nearly eliminate the gettering effect at the in situ Te-stabilized thermal anneal interfaces. Impurities were found to redistribute to the front HgCdTe/CdTe/Si surface and p–n junction interfaces during annealing steps. We also investigated altering the in situ Te-stabilized thermal anneal process to enhance the gettering effect. |
| Databáze: | OpenAIRE |
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