Analog Circuits in 28 nm and 14 nm FinFET

Autor: L. Dorrer, F. Conzatti, Franz Kuttner, Patrick Torta
Rok vydání: 2017
Předmět:
Zdroj: Hybrid ADCs, Smart Sensors for the IoT, and Sub-1V & Advanced Node Analog Circuit Design ISBN: 9783319612843
DOI: 10.1007/978-3-319-61285-0_15
Popis: Intel Tri-Gate transistors (FinFET) further shrink MOSFET technologies and have been a disruptive semiconductor innovation offering lower area, lower supply voltage, and lower power consumption. This paper presents and compares measurements and designs implemented in the 14 nm FinFET and in a planar 28 nm technology. The impact of these novel devices and their characteristics on the overall performance of analog circuits are shown.
Databáze: OpenAIRE