Characteristics of high energy N+-implanted damage in GaSb

Autor:	Liang-Yao Chen, An-Sheng Zheng, Shiming Zhou, You-Hua Qian, Yu-Xiang Zheng, Zhiping He, Chenglu Lin, Ya‐Dong Wang
Rok vydání:	1995
Předmět:	High energy Materials science Scanning electron microscope Analytical chemistry General Chemistry Condensed Matter Physics Rutherford backscattering spectrometry Amorphous solid Ion implantation Ellipsometry Materials Chemistry medicine Swelling medicine.symptom Layer (electronics)
Zdroj:	Solid State Communications. 96:593-596
ISSN:	0038-1098
DOI:	10.1016/0038-1098(95)00425-4
Popis:	Characteristics of 2 MeV N+-implanted damage in GaSb samples with doses from 1 × 1013 cm−2 to 1 × 1015 cm−2 were studied by use of spectroscopic ellipsometry, Rutherford backscattering spectrometry in combination with the channeling technique, and scanning electron microscopy methods. When doses are greater than 3 × 1014 cm−2, the implanted layer becomes amorphous. But no swelling was observed on the implanted sample surfaces, as predicted by R. Callec. By rapid thermal annealing at 600°C for 25 s, a good recovery of the implanted layers has been achieved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3be4dea7ade71084ea97e88c10b0aac9 https://doi.org/10.1016/0038-1098(95)00425-4 Zobrazit plný text záznamu Full Text from ScienceDirect