A MIM Device Featuring both RRAM and Diode Behavior

Autor:	Yimao Cai, Gengyu Yang, Lijie Zhang, Yu Tang, Ru Huang, Yinglong Huang, Yue Pan, Jun Mao, Sheng H. Tan
Rok vydání:	2012
Předmět:	Materials science business.industry Hardware_INTEGRATEDCIRCUITS Optoelectronics business Diode Resistive random-access memory
Zdroj:	ECS Transactions. 44:79-85
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3694299
Popis:	In this paper, a TiN/TaOx/Pt MIM device featuring multi-function characteristics has been successfully fabricated. This device exhibits excellent bipolar resistive random access memory (RRAM) characteristics including low switching voltages, fast switching speed, good retention capability and stable cycling behavior. In addition, it also shows good diode behaviors with abrupt switching process and good thermal stability. The RRAM behaviors and diode rectifying characteristics can be transformed between each other by the voltage controlling, which indicates that this device can be easily programmed for reconfigurable circuits. Further analysis of the mechanism about the multi-function behaviors of the TiN/TaOx/Pt device is also given in this paper.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3bde5ea9ce28622b3dccefae02ee3d8b https://doi.org/10.1149/1.3694299 Zobrazit plný text záznamu