| Autor: |
Anup Bhalla, Karthik Padmanabhan, Lingpeng Guan, Hamza Yilmaz, Madhur Bobde, Allan Chiu, Jongoh Kim, Wen-Jun Li, Lei Zhang |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD). |
| DOI: |
10.1109/ispsd.2015.7123474 |
| Popis: |
In this paper, a novel trench shielded 600V MOSFET with buried field ring is proposed and demonstrated. The proposed structure achieves an active area die shrink of 35-55% compared to a conventional 600V planar MOSFET. Furthermore, it almost doubles the Unclamped Inductive Switching (UIS) rated current and improves 0.3% of the efficiency compared to the Superjunction device. It also shows better diode reverse recovery performance than Superjunction device. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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