Electron-beam crystallized large grained silicon solar cell on glass substrate
| Autor: | D. Amkreutz, Matthieu Schmidt, T. Hänel, Jörg Müller, T. F. Schulze |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Nanocrystalline silicon engineering.material Condensed Matter Physics Copper indium gallium selenide solar cells Electronic Optical and Magnetic Materials Amorphous solid Monocrystalline silicon Polycrystalline silicon engineering Optoelectronics Plasmonic solar cell Electrical and Electronic Engineering Thin film business Layer (electronics) |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 19:937-945 |
| ISSN: | 1062-7995 |
| Popis: | Thin film hetero-emitter solar cells with large-grained poly-silicon absorbers of around 10 µm thickness have been prepared on glass. The basis of the cell concept is electron-beam-crystallization of an amorphous or nanocrystalline silicon layer deposited onto a SiC:B layer. The SiC:B layer covers a commercially well available glass substrate, serving as diffusion barrier, contact layer and dopand source. For silicon absorber deposition a low pressure chemical vapour deposition was used. The successively applied e-beam crystallization process creates poly-silicon layers with grain sizes up to 1 × 10 mm2 with low defect densities. The high electronic quality of the absorber is reflected in open circuit voltages as high as 545 mV, which are realized making use of the well-developed a-Si:H hetero-emitter technology. Copyright © 2011 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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