Electron‐spin‐resonance evidence for an impurity‐relatedE’‐like hole trapping defect in thermally grown SiO2on Si
| Autor: | H. L. Evans, John F. Conley, Patrick M. Lenahan, R. K. Lowry, T. J. Morthorst |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Condensed matter physics Electron capture Schottky defect General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Disordered Systems and Neural Networks Crystallographic defect law.invention Amorphous solid Condensed Matter::Materials Science Paramagnetism Nuclear magnetic resonance law Vacancy defect Diamagnetism Condensed Matter::Strongly Correlated Electrons Electron paramagnetic resonance |
| Zdroj: | Journal of Applied Physics. 76:8186-8188 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.357871 |
| Popis: | Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g‐tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well‐known E’ family of amorphous SiO2 defect centers. |
| Databáze: | OpenAIRE |
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