In situ charging potential monitoring for a high current ribbon beam

Autor:	G. Angel, Reuel B. Liebert, P. Corey, J. Cummings, Svetlana Radovanov, J. Buff
Rok vydání:	2003
Předmět:	Materials science Ion beam business.industry Plasma-immersion ion implantation Space charge Ion implantation Physics::Accelerator Physics Electron temperature Optoelectronics Wafer Current (fluid) Atomic physics business Beam (structure)
Zdroj:	2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
DOI:	10.1109/iit.2000.924218
Popis:	We discuss measurements and modeling associated with the high current ion beam space charge neutralization. We show the importance of the electron temperature in maintaining low beam potential and induced voltage on implanted wafers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3bc9a0c9f7940dceb812ea19670cf06d https://doi.org/10.1109/iit.2000.924218 Zobrazit plný text záznamu