Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor
| Autor: | Hanearl Jung, Ki Yeung Mun, Soo-Hyun Kim, Taejin Choi, Chang Wan Lee, Hyungjun Kim, Jusang Park |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Hybrid physical-chemical vapor deposition Graphene Inorganic chemistry technology industry and agriculture General Physics and Astronomy Surfaces and Interfaces General Chemistry Chemical vapor deposition Condensed Matter Physics Electron spectroscopy Surfaces Coatings and Films law.invention Surface coating symbols.namesake X-ray photoelectron spectroscopy Chemical engineering law symbols Raman spectroscopy Graphene nanoribbons |
| Zdroj: | Applied Surface Science. 343:128-132 |
| ISSN: | 0169-4332 |
| Popis: | A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO 2 /Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr 4 precursor. Thus, CBr 4 precursor is a new alternative candidate for use in the mass production of graphene. |
| Databáze: | OpenAIRE |
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