Air-gap embedding GaN template for enhanced emission from light-emitting diodes
| Autor: | Jae Hyoung Ryu, Kang Bok Ko, Volodymyr V. Lysak, Young Jae Park, Y. S. Katharria, Beo Deul Ryu, Chang-Hee Hong |
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| Rok vydání: | 2013 |
| Předmět: |
Photon
Materials science business.industry Finite-difference time-domain method General Physics and Astronomy Chemical vapor deposition Electroluminescence law.invention symbols.namesake law symbols Optoelectronics General Materials Science Metalorganic vapour phase epitaxy Raman spectroscopy business Light-emitting diode Diode |
| Zdroj: | Current Applied Physics. 13:1981-1987 |
| ISSN: | 1567-1739 |
| DOI: | 10.1016/j.cap.2013.08.012 |
| Popis: | Selective growth by metal-organic chemical vapor deposition (MOCVD), and electrochemical etching of a heavily Si-doped GaN (n+-GaN) interlayer were employed to obtain air-gaps embedded in a u-GaN layer. As confirmed by Raman spectroscopy, the introduction of an n+-GaN, which was later etched to obtain air-gaps, also enhanced the strain-compliance of GaN epilayer on sapphire substrate. An enhanced electroluminescence emission was observed from the light-emitting diodes (LEDs) fabricated on the air-gap embedding template. Using theoretical LED simulation, it was discerned that the increase in optical emission from the LED was caused predominantly by the redirection of photons at GaN/air-gap interface. Finite-difference time domain (FDTD) simulation method was employed to understand the mechanism of optical emission enhancement and its spatial variation over the LED surface. |
| Databáze: | OpenAIRE |
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