Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device
| Autor: | Jung-En Tsai, Kuei-Shu Chang-Liao, Yan-Lin Li, Wen-Hsien Huang, Chang-Hong Shen, Kuan-Chi Chou, Tzu-Cheng Chao, Jia-Min Shieh, Hsin-Kai Fang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Three-dimensional integrated circuit chemistry.chemical_element Germanium 01 natural sciences Flash memory Electronic Optical and Magnetic Materials Flash (photography) CMOS chemistry Electric field 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Layer (electronics) Quantum tunnelling |
| Zdroj: | IEEE Electron Device Letters. 41:1766-1769 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Operation characteristics of polycrystalline germanium (poly-Ge) tri-gate junctionless (JL) charge-trapping (CT) flash memory devices with stacked tunneling layer were studied in this work. The programming speeds of poly-Ge tri-gate JL flash device with GeOx/Al2O3/SiO2 tunneling layer are faster than those with GeOx/Al2O3 or GeOx/SiO2 ones, thanks to the modified electric field in the tunneling layer. Better retention characteristics are also achieved due to a larger barrier height and physical thickness, because Ge diffusion is effectively suppressed by adding an Al2O3 between GeOx and SiO2, which can improve the quality of tunneling layer. A poly-Ge CT flash device fabricated with low-temperature process is promising for embedded memory in Ge CMOS or 3D IC. |
| Databáze: | OpenAIRE |
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