Hafnium silicide formation onSi(001)
| Autor: | S. S. Parihar, Paul F. Lyman, H. T. Johnson-Steigelman, A. V. Brinck |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Binding energy chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials Crystallography chemistry.chemical_compound Transition metal X-ray photoelectron spectroscopy chemistry Electron diffraction Silicide Thin film |
| Zdroj: | Physical Review B. 69 |
| ISSN: | 1550-235X 1098-0121 |
| DOI: | 10.1103/physrevb.69.235322 |
| Popis: | The solid-state reaction of thick $(\ensuremath{\sim}50\phantom{\rule{0.3em}{0ex}}\text{nm})$ and thin $(\ensuremath{\sim}\text{monolayer})$ films of Hf with cleaned and oxidized $\text{Si}(001)$ substrates was investigated. Upon annealing to $1000\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$, films of ${\text{HfSi}}_{2}$ were formed after reaction times that depended upon the surface condition of the substrate before deposition. The chemical state of the reacted surfaces was characterized using x-ray photoelectron spectroscopy, and the shifts in binding energy upon silicide formation were recorded. Even for thick films, low-energy electron diffraction (LEED) revealed that the $(2\ifmmode\times\else\texttimes\fi{}1)$ pattern of the Si substrate emerged, suggesting that three-dimensional islanding of the ${\text{HfSi}}_{2}$ film had occurred. The islanding behavior was investigated for both thick and thin films using LEED, atomic force microscopy, and scanning electron microscopy. Streaking in the LEED patterns for the thick films suggest that the island morphology is influenced by the underlying Si substrate. |
| Databáze: | OpenAIRE |
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