A study of the effect of process oxygen on stress evolution in d.c. magnetron-deposited tin-doped indium oxide
Autor: | Eric Chason, David C. Paine, Natasha Popovich, Hyo-Young Yeom |
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Rok vydání: | 2002 |
Předmět: |
Materials science
Metals and Alloys Analytical chemistry Oxide chemistry.chemical_element Mineralogy Surfaces and Interfaces Sputter deposition Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Indium tin oxide chemistry.chemical_compound chemistry law Materials Chemistry Crystallization Tin Indium Stoichiometry |
Zdroj: | Thin Solid Films. 411:17-22 |
ISSN: | 0040-6090 |
Popis: | We report on the effect of oxygen stoichiometry on the amorphous structure and crystallization kinetics of indium tin oxide. DC magnetron sputtering was used to deposit 200-nm-thick films under low, optimum (with respect to conductivity), and high oxygen partial pressures (0, 0.1 and 2 vol.%, respectively). The film stress and electron transport characteristics (hall mobility and carrier density) of these films were measured before, during and after the crystallization of 9.8 wt.% SnO 2 doped In 2 O 3 . We report that the crystallization rate of films grown with oxygen contents above (2 vol.%) and below (0 vol.%) that required for optimum conductivity (0.1 vol.%) is reduced and that the as-deposited stress is, in all three cases, compressive and increases with increasing oxygen content in the sputter gas. In situ stress measurements were used to determine the change in molar volume attending both the crystallization of ITO and the oxidation of oxygen vacancies. Based on these measurements we report a measure of the effective volume of an oxygen vacancy in indium oxide. |
Databáze: | OpenAIRE |
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