Design and characterization of MoO3/CdSe heterojunctions
| Autor: | S.E. Al Garni, A.F. Qasrawi |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Valence (chemistry) Materials science business.industry Band gap Heterojunction 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Blueshift Thin-film transistor 0103 physical sciences Optoelectronics Charge carrier Thin film 0210 nano-technology business |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 105:162-167 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2018.09.016 |
| Popis: | In this work, the morphological, compositional, structural, optical and dielectric properties of CdSe which are deposited onto glass and onto MoO 3 thin film substrates are investigated. The use of MoO 3 as substrate for the growth of CdSe is observed to increase the lattice parameters of the hexagonal unit cell of CdSe and decreases the values of grain size and strain. It also forms band tails of width of 0.20 eV in the band gap of CdSe. The optical analysis has shown that the MoO 3 /CdSe interfacing results in blue shift in the energy band gap of CdSe and also result in large conduction and valence band of sets of values of 2.12 and 0.94 eV, respectively. The dielectric spectral analysis with the help of Drude-Lorentz approaches for optical conduction, revealed an enhancement in the drift mobility of charge carriers from 15.69 to 39.30 cm 2 /V as a response to the incident electromagnetic field . The free carrier density of the MoO3/CdSe being of the order of 10 17 cm−3 with the large valence and conduction band offsets and the sufficiently large drift mobility nominates the MoO 3 /CdSe heterojunctions as an effective component of optoelectronic technology including thin film transistors . |
| Databáze: | OpenAIRE |
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