Suppression of Side‐Etching in C 2 H 6 / H 2 / O 2 Reactive Ion Etching for the Fabrication of an InGaAsP / InP P‐Substrate Buried‐Heterostructure Laser Diode
| Autor: | Tetsuo Shiba, Hitoshi Tada, Takeshi Miura, Hiroshi Sugimoto, Tadashi Kimura, Akira Takemoto, Toshiro Isu |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Auger electron spectroscopy
Laser diode Renewable Energy Sustainability and the Environment business.industry Chemistry Heterojunction Substrate (electronics) Condensed Matter Physics Laser Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Etching (microfabrication) law Materials Chemistry Electrochemistry Optoelectronics Reactive-ion etching business Diode |
| Zdroj: | Journal of The Electrochemical Society. 140:3615-3620 |
| ISSN: | 1945-7111 0013-4651 |
| Popis: | A reactive ion etching (RIE) technique using a C 2 H 6 , H 2 , and O 2 mixture was applied to the fabrication of InGaAsP/InP P-substrate partially inverted buried heterostructure laser diodes, which have been commercially produced for their superior characteristics. The addition of O 2 suppressed side etching and made it possible to fabricate ridge mesa structures for the laser diodes with a height of 4 μm and a width of 1μm with superior controllability. The effects of O 2 addition were investigated by Auger electron spectroscopy and a mechanism suppressing side etching was examined |
| Databáze: | OpenAIRE |
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