Resistance and structural stabilities of epitaxial CoSi2films on (001) Si substrates

Autor:	S. L. Hsia, Teh Y. Tan, Patrick W. Smith, Gary E. McGuire
Rok vydání:	1992
Předmět:	Materials science Annealing (metallurgy) business.industry Alloy General Physics and Astronomy Mineralogy engineering.material Epitaxy chemistry.chemical_compound chemistry Electrical resistivity and conductivity Silicide engineering Optoelectronics Grain boundary Crystallite Thin film business
Zdroj:	Journal of Applied Physics. 72:1864-1873
ISSN:	1089-7550 0021-8979
Popis:	The resistance and structural stabilities of the epitaxial CoSi2 films, grown on (001) Si substrates using sequentially deposited Ti‐Co bimetallic layer source materials, have been investigated by further anneals under extended conditions. In contrast to reported polycrystalline silicide film cases, the epitaxial CoSi2 films are very stable under the additional rapid thermal annealing treatment at 1100 °C for times from 10 to 60 s. This means that such CoSi2 films are able to stand the further heat treatment required in the ultralarge‐scale integration regime of Si integrated circuit fabrication. The quality of the further annealed films has been actually improved: The film resistivity has decreased to reach a value as low as 10 μΩ cm, and the film structure has become more perfect, e.g., the densities of antiphase domains and film‐Si interface facets have been decreased. For technological applications, it is necessary to remove the Ti‐Co‐Si alloy layer formed concomitantly on top of the as‐grown CoSi2 fi...
Databáze:	OpenAIRE
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