In-Situ Formation of As-H-Functions by β-Elimination of Specific Metalorganic Arsenic Compounds for the MOVPE of III/V-Semiconductors

Autor: G. Zimmerman, H. Protzmann, W. Stolz, E.O. Gobel, P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann
Rok vydání: 2005
Zdroj: Sixth International Conference Metalorganic Vapor Phase Epitaxy.
DOI: 10.1109/movpe.1992.665037
Databáze: OpenAIRE