On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties
| Autor: | L. Adams, B. Johlander, Eugenijus Gaubas, Eddy Simoen, C. Claeys, A. Kaniava, Jan Vanhellemont, Gijs Bosman, P. Clauws |
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| Rok vydání: | 1994 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon business.industry chemistry.chemical_element Carrier lifetime Semiconductor device Substrate (electronics) Nuclear Energy and Engineering chemistry Radiation damage Optoelectronics Charge carrier Irradiation Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 41:1924-1931 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.340525 |
| Popis: | The electrical activity of MeV particle irradiation induced lattice defects in silicon, is studied through their impact on diode characteristics and on minority carrier lifetime. For the first time results are presented on low-frequency noise spectroscopy for radiation damage and substrate characterisation. The results show that diodes on Cz substrates are more radiation hard than on epi- and FZ substrates but have a poorer quality before irradiation with respect to noise, minority carrier lifetime and I/V characteristics. > |
| Databáze: | OpenAIRE |
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