Size dependence of switching thresholds for pseudo spin valve MRAM cells

Autor:	James M. Daughton, Brenda A. Everitt, A. V. Pohm
Rok vydání:	1997
Předmět:	Magnetoresistive random-access memory Materials science Magnetoresistance Magnetic domain business.industry Magnetic storage Spin valve General Physics and Astronomy Giant magnetoresistance law.invention Magnetization law Optoelectronics Single domain business
Zdroj:	Journal of Applied Physics. 81:4020-4022
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.364923
Popis:	For magnetoresistive random access memory (MRAM) to be a successful new memory technology, very dense cells with high output are necessary. As bit sizes shrink, it becomes advantageous to employ memory modes in which the uniaxial anisotropy lies along the length of the bit. For bits smaller than approximately 0.2 μm in width, curling across the bit becomes small, and the magnetization may be treated as a uniform single domain. We have modeled “pseudo spin valve” MRAM cells in the single-domain approximation. Calculations in this size regime for asymmetric giant magnetoresistive (GMR) sandwich material reveal that switching thresholds are sensitive to bit size. Submicron cells 0.4 μm×2.2 μm in size have been patterned from asymmetric GMR sandwich material and switching thresholds compare favorably with the single-domain model. These “pseudo spin valve” memory cells are very promising for nonvolatile, high speed, high-density memories.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b80c986700c2d32062391a5a8303f46 https://doi.org/10.1063/1.364923 Zobrazit plný text záznamu