W-band resistive mixer using metamorphic HEMT

Autor:	Sam-Dong Kim, Jung-Dong Park, Jung-Hun Oh, Jin-Koo Rhee, Bok-Hyung Lee, Yong-Hyun Baek, Dan-An, Byeong-Ok Lim
Rok vydání:	2006
Předmět:	Resistive touchscreen Materials science W band business.industry Amplifier General Physics and Astronomy Optoelectronics Linearity General Materials Science High-electron-mobility transistor business
Zdroj:	Current Applied Physics. 6:821-826
ISSN:	1567-1739
Popis:	We fabricate single-ended resistive W-band millimeter-wave monolithic IC (MIMIC) mixers based on 0.1 μm InGaAs/InAlAs/GaAs metamorphic HEMT technology. The mixers show good characteristics in linearity and LO-RF isolation, and the mixers with IF amplifiers exhibit a conversion loss of ∼0.4 dB, which is an improvement of ∼7.8 dB compared to that of the mixers without IF amplifiers. We obtain P-1 dB of 10 and 9 dBm from the mixers with and without the IF amplifiers, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b70b9d22bfb455af5c2641e0e32d685 https://doi.org/10.1016/j.cap.2004.12.011 Zobrazit plný text záznamu Full Text from ScienceDirect