Barrier thickness dependence of the photoscreening of the piezoelectric field in (111) orientated GaAs–InxGa1−xAs double quantum wells

Autor:	Philip Dawson, M. Moran, K. J. Moore
Rok vydání:	1998
Předmět:	Condensed Matter::Materials Science chemistry.chemical_compound X-ray absorption spectroscopy Photoluminescence Condensed matter physics Field (physics) Chemistry General Physics and Astronomy Electron Double quantum Piezoelectricity Spectral line Gallium arsenide
Zdroj:	Journal of Applied Physics. 84:3349-3353
ISSN:	1089-7550 0021-8979
Popis:	In this article we present low temperature photoluminescence spectra from a series of (111) orientated GaAs–InxGa1−xAs double quantum well structures with differing barrier thicknesses. We demonstrate an enhancement in the carrier screening of the strain induced internal piezoelectric field by photocreated electrons and holes as the barrier thickness is increased. The enhanced screening arises from an increase in the spatial separation of the electron and hole populations. Additionally, we observed a photoinduced spatial transfer of the second lowest lying heavy hole level. This spatial transfer is a strong function of the electron and hole separation and limits the amount of the optically pumped “blue” shift of the lowest energy intersubband transition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b7075a9d6aabef934bd5295f5646b73 https://doi.org/10.1063/1.368491 Zobrazit plný text záznamu