A New Single Source Precursor Approach to Gallium and Aluminum Nitride

Autor:	Richard A. Jones, Deborah A. Neumayer, Alan H. Cowley, J. M. White, Mark Arendt, Claire J. Carmalt, John G. Ekerdt
Rok vydání:	1995
Předmět:	chemistry.chemical_compound Materials science chemistry Chemical engineering Band gap chemistry.chemical_element Substrate (electronics) Azide Nitride Gallium Thin film Epitaxy Amorphous solid
Zdroj:	MRS Proceedings. 395
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-395-85
Popis:	Single source precursors which contain preformed gallium-nitrogen and aluminum-nitrogen bonds are being considered for the growth of gallium and aluminum nitride because of their potential for overcoming problems associated with conventional precursors. Presented is the evaluation of dimethylgallium azide, Me2GaN3(1), bisdimethylamidogallium azide, (Me2N)2GaN3(2), and bisdimethylamidoaluminum azide, (Me2N)2AlN3(3) as potential precursors for A1N and GaN film growth. The compounds were evaluated for stability, ease of transport, temperature of decomposition and quality of film deposited. Amorphous thin films of GaN with a band gap of 3.4 eV were deposited with 2 at 250 °C. Increasing the substrate temperature to 580 °C resulted in the deposition of epitaxial GaN films. Polycrystalline A1N films were grown with 3 at 600 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b70154843e860fbe14d06fc9d69909d https://doi.org/10.1557/proc-395-85 Zobrazit plný text záznamu Full text from SpringerLink