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Erbium-doped layers have been produced on 〈1 1 1〉 -oriented silicon wafers using high-energy amorphizing Er implants and solid phase epitaxy (SPE). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques, used to study the microstructure of these layers, revealed the presence of microtwins and dislocations. The twins were found to be platelets with lateral dimensions of 15–30 nm and a thickness of about 2–9 nm, and their density throughout the regrown layer was nonuniform. The dislocation densities observed in the regrown layers were very high with densities exceeding 1010 cm−2. Within the implant fluence range studied, between 1×1014 and 9×1014 Er cm−2, the twin and dislocation densities were observed to increase with fluence, while the twin dimensions were found to decrease. |
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