Direct fabrication of SiGe crystallites on glass substrate: from nanocrystals to microcrystals
| Autor: | Juni-ici Hanna, Takayuki Ohuchi, Masaji Yamamoto |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
education.field_of_study
Materials science Population Nucleation Mineralogy Substrate (electronics) Condensed Matter Physics Electronic Optical and Magnetic Materials Amorphous solid Crystallinity Chemical engineering Electron diffraction Transmission electron microscopy Materials Chemistry Ceramics and Composites Crystallite education |
| Zdroj: | Journal of Non-Crystalline Solids. :879-882 |
| ISSN: | 0022-3093 |
| Popis: | We have found that a newly developed thermal CVD technique, reactive thermal CVD , provided us with a powerful tool for fabricating SiGe crystallites directly on a glass substrate from GeF 4 and disilane. In an early stage of this film growth, crystalline nuclei occurred without any accompanying amorphous deposit on the substrate at temperatures less than 450°C. The grain size and population on the substrate were easily tailored from nanocrystallites to microcrystallites and over several orders of magnitude in population by selecting growth conditions. Crystallinity was confirmed by Raman and transmission electron microscopy (TEM) combined with transmission electron diffraction (TED) studies. The experimental results suggested that there exist two different mechanisms dominating the nucleation of crystallites on the substrate, one of which is a heterogenous nucleation on the surface and the other a homogeneous nucleation in the gas phase near the surface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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